feb.1999 mitsubishi transistor modules QM100HC-M high power switching use non-insulated type outline drawing & circuit diagram dimensions in mm application robotics, forklifts, welders QM100HC-M ? i c collector current ........................ 100a ? v cex collector-emitter voltage ........... 350v ? h fe dc current gain............................. 100 ? non-insulated type 53.5 43.3 33 8 8 5.3 36.5 r6 10.5 f 5.3 14 4.5 4.5 b e m5 22 4.5 23.5 b e c label
feb.1999 symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) absolute maximum ratings (tj=25 c, unless otherwise noted) electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 100/200 symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute main terminal screw m5 mounting screw m5 typical value ratings 350 350 400 10 100 100 420 3 1000 C40~+150 C40~+125 1.47~1.96 15~20 1.47~1.96 15~20 90 unit v v v v a a w a a c c v nm kgcm nm kgcm g parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =350v, v eb =2v v cb =400v, emitter open v eb =10v i c =100a, i b =1a Ci c =100a (diode forward voltage) i c =100a, v ce =2v/5v v cc =200v, i c =100a, i b1 =Ci b2 =2a transistor part diode part conductive grease applied typ. max. 1.0 1.0 200 2.0 2.5 1.5 2.0 10 3.0 0.3 0.5 0.15 mitsubishi transistor modules QM100HC-M high power switching use non-insulated type
feb.1999 performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM100HC-M high power switching use non-insulated type 3 10 2 10 1 10 0 10 2 10 1 10 0 10 ? 10 1 10 0 10 7 5 4 3 2 7 5 4 3 2 1.0 1.4 1.8 2.2 2.6 3.0 v ce =2.0v t j =25? 0 10 1 10 ? 10 7 5 4 3 2 7 5 4 3 2 23457 23457 t j =25? t j =125? i b =1a v be(sat) v ce(sat) 1 10 ? 10 0 10 1 10 2 10 2 200 160 120 80 40 0 01 23 4 5 t j =25? i b =2.0a i b =1.0a i b =0.5a i b =0.2a i b =0.1a 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 2 10 3 10 1 10 0 10 4 10 3 10 2 10 1 10 444 t j =25? t j =125? v ce =2.0v v ce =5.0v 7 5 3 2 7 5 3 2 7 5 3 2 5 4 3 2 1 0 t j =25? t j =125? ? 10 ? 10 444 i c =50a i c =100a i c =70a i c =120a 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 4 4 4 i b1 =? b2 =2a v cc =200v t j =25? t j =125? t s t on t f
feb.1999 switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM100HC-M high power switching use non-insulated type z th (jCc) ( c/ w) ? 10 1 10 0 10 ? 10 ? 10 ? 10 3 10 2 10 1 10 0 10 100 80 60 40 20 0 0 20 60 100 120 160 40 80 140 10 30 50 70 90 200 160 120 80 40 0 0 100 200 300 400 500 i b2 =?a ?a t j =125? 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 t c =25? 2 10 3 10 1 10 0 10 3 10 2 10 1 10 0 10 100? 444 dc 10ms 1ms t w =50 ? 200? 1 10 7 5 4 3 2 0 10 7 5 4 3 2 23457 23457 2 t s t f v cc =200v i b1 =2a i c =100a t j =25? t j =125? 7 5 3 2 7 5 3 2 7 5 3 2 0.5 0.4 0.3 0.2 0.1 0 7 5 3 2 1 10 0 10 0 10 47 5 3 24 444 7 5 3 2 7 5 3 2 7 5 3 2 0 0.4 0.8 1.2 1.6 2.0 t j =25? t j =125? non?epetitive collector dissipation second breakdown area
feb.1999 7 5 4 3 2 7 5 4 3 2 0 200 400 600 800 1000 0 10 1 10 2 10 7 5 3 2 7 5 3 2 7 5 3 2 1.0 0.8 0.6 0.4 0.2 0 7 5 3 2 1 10 0 10 ? 10 444 7 5 4 3 2 7 5 4 3 2 23457 23457 t j =25? t j =125? t rr i rr q rr 2 10 1 10 0 10 0 10 1 10 2 10 ? 10 0 10 1 10 i b1 =? b2 =2a v cc =200v 4 10 ? 10 0 10 ? i rr (a), q rr ( m c) surge collector reverse current Ci csm (a) transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) mitsubishi transistor modules QM100HC-M high power switching use non-insulated type z th (jCc) ( c/ w) t rr ( m s)
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